? semiconductor components industries, llc, 2001 june, 2000 rev. 3 1 publication order number: bc635/d bc635, bc637, bc639, bc639-16 high current transistors npn silicon maximum ratings rating symbol value unit collector-emitter voltage bc635 bc637 bc639 v ceo 45 60 80 vdc collector-base voltage bc635 bc637 bc639 v cbo 45 60 80 vdc emitter-base voltage v ebo 5.0 vdc collector current e continuous i c 1.0 adc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 800 12 mw mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r q ja 200 c/w thermal resistance, junction to case r q jc 83.3 c/w device package shipping ordering information bc635rl1 to92 http://onsemi.com to92 (to226aa) case 29 style 14 2000/tape & reel collector 2 3 base 1 emitter 1 2 3 bc635zl1 to92 2000/ammo pack bc637 to92 5000 units/box bc639 to92 5000 units/box bc639rl1 to92 2000/tape & reel bc639zl1 to92 2000/ammo pack bc63916zl1 to92 2000/ammo pack
bc635, bc637, bc639, bc63916 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (1) (i c = 10 adc, i b = 0) bc635 bc637 bc639 v (br)ceo 45 60 80 e e e e e e vdc collectoremitter zerogate breakdown voltage (1) (i c = 100 adc, i b = 0) bc63916 v (br)ces 120 e e vdc collectorbase breakdown voltage (i c = 100 m adc, i e = 0) bc635 bc637 bc639 v (br)cbo 45 60 80 e e e e e e vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 e e vdc collector cutoff current (v cb = 30 vdc, i e = 0) (v cb = 30 vdc, i e = 0, t a = 125 c) i cbo e e e e 100 10 nadc m adc on characteristics (1) dc current gain (i c = 5.0 madc, v ce = 2.0 vdc) (i c = 150 madc, v ce = 2.0 vdc) bc635 bc637 bc639 bc63916zlt1 (i c = 500 ma, v ce = 2.0 v) h fe 25 40 40 40 100 25 e e e e e e e 250 160 160 250 e e collectoremitter saturation voltage (i c = 500 madc, i b = 50 madc) v ce(sat) e e 0.5 vdc baseemitter on voltage (i c = 500 madc, v ce = 2.0 vdc) v be(on) e e 1.0 vdc dynamic characteristics currentgain e bandwidth product (i c = 50 madc, v ce = 2.0 vdc, f = 100 mhz) f t e 200 e mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c ob e 7.0 e pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ib e 50 e pf 1. pulse test: pulse width 300 m s, duty cycle 2.0%.
bc635, bc637, bc639, bc63916 http://onsemi.com 3 i c , collector current (ma) h fe , dc current gain f, current-gain bandwidth product (mhz) t v, voltage (volts) v , temperature coefficients (mv/ c) q 1000 1 2 5 10 20 50 100 200 500 100 1 2 3 4 5 7 10 20 30 40 50 70 v ce , collector-emitter voltage (volts) figure 1. active region safe operating area bc635 bc637 bc639 p d t a 25 c p d t c 25 c soa = 1s p d t c 25 c p d t a 25 c 500 200 100 50 20 1 3 5 10 30 50 100 300 500 1000 i c , collector current (ma) figure 2. dc current gain v ce = 2 v 500 300 100 50 20 1 10 100 1000 i c , collector current (ma) figure 3. currentgain e bandwidth product v ce = 2 v 1 0.8 0.6 0.4 0.2 0 1 10 100 1000 i c , collector current (ma) figure 4. asaturationo and aono voltages v be(sat) @ i c /i b = 10 v be(on) @ v ce = 2 v v ce(sat) @ i c /i b = 10 -0.2 -1.0 -2.2 -1.6 1 3 5 10 30 50 100 300 500 1000 i c , collector current (ma) figure 5. temperature coefficients v ce = 2 volts d t = 0 c to +100 c q v for v be
bc635, bc637, bc639, bc63916 http://onsemi.com 4 package dimensions to92 (to226) case 2911 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 14: pin 1. emitter 2. collector 3. base on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bc635/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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